[D4-O2] Slot 02

[D4-O2-03 (Symposium Invited)] Pump-probe X-ray Diffraction Analysis of Lattice Deformation Induced by Inverse Piezoelectric Effect in AlGaN/GaN HEMT Devices

*Akira Sakai¹, Akira Ueda¹, Haruna Shiomi¹, Akihiro Shimada¹, Yasuhiko Imai², Yusuke Hayashi¹, Tetsuya Tohei¹, Yuji Ando³, Tamotsu Hashizume³, Kazushi Sumitani², Shigeru Kimura² (1. Osaka Univ. (Japan), 2. JASRI (Japan), 3. Hokkaido Univ. (Japan))

キーワード：Pump-probe method, Nanobeam X-ray diffraction, Inverse piezoelectric effect, AlGaN/GaN HEMT, Time-resolved analysis , gate voltage