International Display Workshops General Incorporated Association

[AMDp1-5] Selective Doping in Drain Region of Amorphous Oxide Thin-Film Transistor by Electrical Stress under Illumination

*Himchan Oh1、Chi-Sun Hwang1 (1.Electronics and Telecommunications Research Institute (Korea))

oxide semiconductor, thin film transistor, bias stress

https://doi.org/10.36463/idw.2021.0196

A unique method to enhance the electrical performance of oxide thin film transistor(TFT) is presented. Photo-induced holes and positively charged oxygen vacancies are attracted to near the drain terminal by applying negative bias to gate and drain electrode under illumination. These positive charges gather electrons to form n+ doped region and thus lower the parasitic resistance. The field-effect mobility increased up to 80% via this...