[AMDp1-7] Hydrogenated Amorphous Silicon Film Transistor Fabrication with Back-Channel-Oxidized Method
amorphous silicon, thin film transistor, back-channel-oxidized method
An a-Si:H thin film transistor was fabricated with back-channel-oxidized(BCO) method. The mobility of the BCO TFT was 0.42 cm2/V·s, and stability characteristic is comparable with back-channel-etched(BCE) type TFT. It were studied that different n+ layer thickness, oxidation time and pre-treatment influenced BCO TFT device characteristics.