Monolithic Integration of Sn-Doped IGZO Transistor and Ferroelectric Memory for High-Density Memory Applications

Masaharu Kobayashi, Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto, Kohei Nishiyama, Mototaka Ochi, Hiroshi Goto

doi:https://doi.org/10.36463/idw.2021.0145

[AMD4/AIS6-1(Invited)] Monolithic Integration of Sn-Doped IGZO Transistor and Ferroelectric Memory for High-Density Memory Applications

AMD Workshop

*Masaharu Kobayashi¹, Jixuan Wu¹, Fei Mo¹, Takuya Saraya¹, Toshiro Hiramoto¹, Kohei Nishiyama², Mototaka Ochi², Hiroshi Goto³ (1.The University of Tokyo (Japan), 2.Kobe Steel, Ltd. (Japan), 3.Kobelco Research Institute, Inc. (Japan))

monolithic integration, IGZO, ferroelectric memory

https://doi.org/10.36463/idw.2021.0145

We have developed and integrated mobility-enhanced FET and wakeup-free ferroelectric capacitor by using Sn-doped InGaZnO, and demonstrated 1T1C FeRAM cell operation for 3D embedded memory. We have studied the impact of thin-film access transistor on 1T1C cell operation, and investigated the physics of mobility enhancement.

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[AMD4/AIS6-1(Invited)] Monolithic Integration of Sn-Doped IGZO Transistor and Ferroelectric Memory for High-Density Memory Applications

AMD Workshop