Far-UVC to Red Nitride Nano-LEDs

Matthew Stevenson, David Laleyan, Zetian Mi, Seth Coe-Sullivan, Xianhe Liu, Yuanpeng Wu, Yakshita Malhotra, Yi Sun, Yong-Ho Ra, Renjie Wang

doi:https://doi.org/10.36463/idw.2021.0761

1:00 PM - 1:20 PM

[MEET1-1(Invited)] Far-UVC to Red Nitride Nano-LEDs

Matthew Stevenson¹, David Laleyan¹, Zetian Mi^1,3,2, *Seth Coe-Sullivan¹, Xianhe Liu^2,3, Yuanpeng Wu³, Yakshita Malhotra³, Yi Sun³, Yong-Ho Ra², Renjie Wang² (1.NS Nanotech (United States of America), 2.McGill University (Canada), 3.University of Michigan (United States of America))

Nanowire, quantum dot, GaN, far-UVC, light emitting diode

https://doi.org/10.36463/idw.2021.0761

We demonstrate the use of Nitride semiconductors as the light emitting layer in a series of devices, from Visible emitting LEDs, to far-UVC LEDs and novel light emitting devices.

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[MEET1-1(Invited)] Far-UVC to Red Nitride Nano-LEDs