5:00 PM - 5:20 PM
[MEET3-2(Invited)] Investigation of GaN-based Micro-LEDs with Passivation Layers
GaN-based Micro-LEDs, ALD passivation, Ideality Factor
Micro-light-emitting diodes (Micro-LEDs) with various pixel size and device structures are designed and fabricated based on sapphire substrate. Systematically investigation of GaN-based Micro-LEDs with dielectric layer deposited by atomic layer deposition (ALD) is reported. The devices with ALD passivation and KOH
treatment exhibit better I-V characteristics, smaller ideal factor, and better reliability for high-brightness displays.
treatment exhibit better I-V characteristics, smaller ideal factor, and better reliability for high-brightness displays.