International Display Workshops General Incorporated Association

09:00 〜 09:40

[PH1-1(Invited)] Eu-Doped GaN-Based Red LEDs as a Key Technology for Micro-LED Displays with Ultrahigh Resolution

*Yasufumi Fujiwara1、Shuhei Ichikawa1、Dolf Timmerman1、Jun Tatebayashi1 (1.Osaka University (Japan))

Micro-LED display, GaN, Eu doping, Red LED, Monolithic integration

https://doi.org/10.36463/idw.2021.0305

A novel red LED using Eu-doped GaN is a promising component for next-generation display with ultrasmall-size, full-color, and high-resolution. The LED exhibits narrow-band red emission and the wavelength is almost independent of ambient temperature and injected current. The size dependence of emission efficiency is negligibly small compared with conventional AlInGaP-based red LEDs. We also demonstrated monolithic integration of vertically stacked full-color LEDs.