2:50 PM - 3:10 PM
[FLX2-1 (Invited)] Design of Atomic Layer Deposited Oxide Channel Transistor for High-Performance, High-Pixel Density AMOLED
oxide semiconductor, atomic layer deposition, high mobility
In this paper, we will address the design of oxide semiconductor on basis of atomic layer deposition for high-performance, high-pixel density AMOLED. The 2DEG concept can be demonstrated in ALD-based oxide TFTs, which renders the exceptional high field-effect mobility (>70 cm2/Vs) and excellent PBTS/NBTS stability.