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[A-6-04] Chemical Structure of SiN Films Deposited on High Aspect Trench by Plasma Enhanced Atomic Layer Deposition

〇Tappei Nishihara¹, Ryo Yokogawa^1,2, Yuji Otsuki³, Munehito Kagaya³, Atsushi Ogura^2,1 (1. Meiji Univ.(Japan), 2. Meiji Renewable Energy Lab.(Japan), 3. Tokyo Electron Technology Solutions Ltd.(Japan))

https://doi.org/10.7567/SSDM.2020.A-6-04