The Japan Society of Applied Physics

17:30 〜 17:45

[A-6-06] ON current enhancement and single-electron transport in tunnel FETs by a new isoelectronic trap impurity of beryllium

〇Yoshisuke Ban1, Kimihiko Kato2, Shota Iizuka2, Satoshi Moriyama3, Koji Ishibashi1, Keiji Ono1, Takahiro Mori2 (1. RIKEN(Japan), 2. AIST(Japan), 3. Tokyo Denki Univ. (TDU)(Japan))

https://doi.org/10.7567/SSDM.2020.A-6-06