Impact of Zr Concentration on Time-Dependent Dielectric Breakdown of HfZrO-based Ferroelectric Tunnel Junction (FTJ) Memory

Marina Yamaguchi

doi:https://doi.org/10.7567/SSDM.2020.B-2-01

16:00 〜 16:15

[B-2-01] Impact of Zr Concentration on Time-Dependent Dielectric Breakdown of HfZrO-based Ferroelectric Tunnel Junction (FTJ) Memory

〇Marina Yamaguchi¹, Kensuke Ota¹, Shosuke Fujii¹, Reika Ichihara¹, Kazuhiro Matsuo¹, Kota Takahashi¹, Yuta Kamiya¹, Masumi Saitoh¹ (1. Kioxia Corp.(Japan))

https://doi.org/10.7567/SSDM.2020.B-2-01

2020 International Conference on Solid State Devices and Materials

[B-2-01] Impact of Zr Concentration on Time-Dependent Dielectric Breakdown of HfZrO-based Ferroelectric Tunnel Junction (FTJ) Memory