The Japan Society of Applied Physics

11:30 〜 11:45

[C-4-02] Over 230 fF/μm2 capacitance density 9.0V breakdown voltage textured deep trench SiN capacitors toward 3D integration

〇Koga Saito1, Rihito Kuroda1, Hiroshi Shibata2, Taku Shibaguchi2, Naoya Kuriyama2, Shigetoshi Sugawa1 (1. Tohoku University(Japan), 2. LAPIS Semiconductor Miyagi Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2020.C-4-02