The Japan Society of Applied Physics

17:00 〜 17:15

[D-10-04] Large-Diameter 3C-SiC/Si Hetero-Epitaxial Substrates and Thick, High-Quality GaN Epitaxial Layers Grown on These Substrates for GaN Power Applications

〇Keisuke Kawamura1, Shigeomi Hishiki1, Hiroki Uratani1, Sumito Ouchi1, Hiroki Suzuki1, Yoshiki Sakaida1, Koichi Kitahara1, Hirokazu Goto1, Ichiro Hide1, Shuichi Kaneko2, Osamu Machida2, Toru Yoshie2 (1. Air Water Inc.(Japan), 2. Sanken Electric Co., LTD(Japan))

https://doi.org/10.7567/SSDM.2020.D-10-04