The Japan Society of Applied Physics

17:45 〜 18:00

[D-10-07 (Late News)] Normally-off Recessed-gate ZrO2/AlGaN/GaN MIS-HEMTs with Regrown AlGaN Barrier

〇Itsuki Nagase1, Joel Tacla Asubar1, Rui Shan Low1, Shun Urano1, Hirokuni Tokuda1, Akio Yamamoto1, Masaaki Kuzuhara2 (1. University of Fukui(Japan), 2. Kwansei Gakuin University(Japan))

https://doi.org/10.7567/SSDM.2020.D-10-07