The Japan Society of Applied Physics

17:00 〜 17:15

[D-6-04] Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation

〇Shogo Sekine1, Masakazu Okada2, Teruaki Kumazawa2, Mitsuru Sometani2, Hirohisa Hirai2, Naoya Serizawa1, Ryu Hasunuma1, Mitsuo Okamoto2, Shinsuke Harada2 (1. Univ. of Tsukuba(Japan), 2. Inst. Advanced Industrial Science and Technology(Japan))

https://doi.org/10.7567/SSDM.2020.D-6-04