The Japan Society of Applied Physics

09:30 〜 09:45

[D-7-03] Effect of the Gate Width Extension in Millimeter Scale on the RF Performance of Polycrystalline Diamond MOSFETs

〇Masakazu Arai1, Ken Kudara1, Shoichiro Imanishi1, Atsushi Hiraiwa1, Hiroshi Kawarada1,2 (1. School of Fundamental Sci. & Eng. Waseda Univ.(Japan), 2. Kagami Memorial Res. Inst. for Materials Sci. and Tech.(Japan))

https://doi.org/10.7567/SSDM.2020.D-7-03