The Japan Society of Applied Physics

09:45 〜 10:00

[H-3-04] Low Contact Resistance between Sputtered-MoS2 and Self-Aligned-TiSi2 Films Treated by Higher-Temperature Forming-Gas Annealing

〇Satoshi Igarashi1, Yusuke Mochiduki1, Haruki Tanigawa1, Masaya Hamada1, Kentaro Matsuura1, Iriya Muneta1, Kuniyuki Kakushima1, Kazuo Tsutsui1, Hitoshi Wakabayashi1 (1. Tokyo Tech(Japan))

https://doi.org/10.7567/SSDM.2020.H-3-04