The Japan Society of Applied Physics

14:15 〜 14:30

[H-9-02] ZrS2 Ambipolar FETs with Schottky-Barrier Contact to Near-Midgap TiN Film Controlled by Top-Gate TiN/Al2O3 Stacks

〇Masaya Hamada1, Kentaro Matsuura1, Takuya Hamada1, Iriya Muneta1, Kuniyuki Kakushima1, Kazuo Tsutsui1, Hitoshi Wakabayashi1 (1. Tokyo Tech.(Japan))

https://doi.org/10.7567/SSDM.2020.H-9-02