The Japan Society of Applied Physics

14:30 〜 14:45

[H-9-03] ALD-ZrO2 Gate Dielectric with Suppressed Interfacial Oxidation for High Performance MoS2 Top Gate MOSFETs

〇WENHSIN CHANG1, Naoya Okada1, Masayo Horikawa1, Takahiko Endo2, Yasumitsu Miyata2, Toshifumi Irisawa1 (1. Natl. Inst. Adv. Indus. Sci. Tech.(Japan), 2. Tokyo Metropolitan Univ.(Japan))

https://doi.org/10.7567/SSDM.2020.H-9-03