The Japan Society of Applied Physics

11:30 〜 11:45

[K-4-02] impact of selective thermal etching in mixed H2/NH3 atmosphere on crystal quality of N-polar AlGaN/GaN heterostructures

〇Yuki Yoshiya1, Takuya Hoshi1, Hiroki Sugiyama1, Hideaki Matsuzaki1 (1. NTT Device Technology Labs, NTT Corporation(Japan))

https://doi.org/10.7567/SSDM.2020.K-4-02