[8a-C24-1~12] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[8a-C24-4] Role of Proton in a-Si:H formation

〇Yasutake Toyoshima¹ (1.AIST-iECO)

Keywords:amorphous Si, ambipolar diffusion, proton

From the activation energy analysis of growth rate increase at higher temperature in PECVD grown a-Si:H films, the role of proton coming to the growing surface by way of ambipolar diffusion is investigated. It is proposed that positively charged three center bond formed by the insertion of proton into Si-Si bond would be the possible origin of amorphous formation under discharge plasma.