[19a-PA2-1~26] 3.9 Terahertz technologies

▲ [19a-PA2-3] Enhanced THz emission of silicon nanowire-coated gallium arsenide photoconductive antenna

Neil Irvin Cabello¹, Alexander De Los Reyes¹, Joybelle Lopez¹, Vladimir Sarmiento¹, John Paul Ferrolino¹, Maria Angela Faustino¹, Victor DC Andres Vistro¹, Clairecynth Yu¹, Hannah Bardolaza¹, Miezel Talara², Masaki Shiihara², Valynn Mag-usara², Jessica Afalla², Hideaki Kitahara², Masahiko Tani², Arnel Salvador¹, Armando Somintac¹, 〇Elmer Surat Estacio¹ (1.U.P. Diliman, 2.Univ. of Fukui)

Keywords:terahertz, nanostructures, photoconductive antenna

We report on the enhancement of the THz emission from a GaAs photoconductive antenna (PCA) coated with silicon nanowires (SiNWs). The PCA was fabricated by patterning a 10 μm bowtie antenna on a semi-insulating GaAs. The SiNWs were fabricated using metal-assisted chemical etching and were applied onto the PCA using simple drop-cast method. The increased THz intensity was attributed to improved photoabsorption resulting from the application of the SiNWs.