ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Fr-1A] Oxide Stability and Reliability

Fri. Oct 4, 2019 8:45 AM - 10:00 AM Room A (Kyoto International Conference Center)

8:45 AM - 9:15 AM

[Fr-1A-01(Invited)] Threshold voltage instabilities in 4H-SiC MOSFETs

*Gregor Pobegen1, T Aichinger2, G Rescher2 (1. KAI Kompetenzzentrum für Automobil- und Industrieelektronik GmbH(Austria), 2. Infineon Technologies AG(Austria))