講演情報

Oral Presentation

MOS Gate Stacks and Device Processing

[Fr-1A] Oxide Stability and Reliability

2019年10月4日(金) 08:45 〜 10:00 Room A (Kyoto International Conference Center)

09:30 〜 09:45

[Fr-1A-03] Tunneling Effects in NH₃ annealed 4H-SiC Trench MOSFETs

*Judith Berens^1,2, Gregor Pobegen¹, Tibor Grasser² (1. KAI GmbH(Austria), 2. Inst. for Microelectronics, TU Wien(Austria))