ICSCRM2019

Presentation information

Oral Presentation

Power and High-Frequency Devices

[Fr-2A] Bipolar Power Transistors

Fri. Oct 4, 2019 10:30 AM - 12:00 PM Room A (Kyoto International Conference Center)

10:30 AM - 11:00 AM

[Fr-2A-01(Invited)] Next-Generation High- to Ultra-High-Voltage SiC Power Devices

*Yoshiyuki Yonezawa1, K. Nakayama1, R. Kosugi1, S. Harada1, K. Kojima1, T. Kato1, H. Tsuchida2, T. Kimoto3, H. Okumura1 ( 1. National Institute of Advanced Industrial Science and Technology(AIST)(Japan), 2. Central Research Institute of Electric Power Industry(Japan), 3. Department of Electronic Science & Engineering, Kyoto University(Japan))