[Mo-P] Poster Presentation

[Mo-P-29] Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET based on Temperature-dependent Hall Effect Measurement

Hironori TAKEDA¹, Mitsuru SOMETANI², Takuji HOSOI¹, Takayoshi SHIMURA¹, Hiroshi YANO³, *Heiji WATANABE¹ (1. Osaka Univ.(Japan), 2. AIST(Japan), 3. Univ. Tsukuba(Japan))