ICSCRM2019

講演情報

印刷

Oral Presentation

Characterization and Defect Engineering

[Th-1B] Extended Defects II

2019年10月3日(木) 08:45 〜 10:15 Annex Hall 2 (Kyoto International Conference Center)

09:45 〜 10:00

[Th-1B-04] BPD-TED Conversion in the SiC substrate after High-Temperature Si-VE

*Yusuke Sudoh1, Makoto Kitabatake1, Tadaaki Kaneko2 (1. Toyo Tanso Corp.(Japan), 2. Kwansei Gakuin Univ.(Japan))