ICSCRM2019

講演情報

Oral Presentation

MOS Gate Stacks and Device Processing

[Th-2A] Device Processing

2019年10月3日(木) 10:45 〜 12:15 Room A (Kyoto International Conference Center)

11:30 〜 11:45

[Th-2A-03] The Waffle Substrate: A Novel Approach to Reducing Substrate Resistance in SiC Power Devices

Noah Opondo1, *James A Cooper2, Hangjie Liao1, Weinong W. Chen1, Dallas T. Morrisette1 (1. Purdue Univ.(United States of America), 2. Sonrisa Research, Inc., and Purdue Univ.(United States of America))