スケジュール 2 13:45 〜 15:45 [Th-P-43] Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges *Akinori Takeyama1, Keigo Shimizu2, Takahiro Makino1, Yuichi Yamazaki1, Shin-ichiro Kuroki3, Yasunori Tanaka2, Takeshi Ohshima1 (1. QST(Japan), 2. AIST(Japan), 3. Hiroshima Univ.(Japan))