2019年10月1日(火) 10:45 〜 12:30Annex Hall 2 (Kyoto International Conference Center)
スケジュール
9
11:30 〜 11:45
[Tu-2B-03] Growth and Characterization of Al-Doped p-type 4H-SiC Grown by PVT
*Kazuma Eto1, Hiromasa Suo1,2, Tomohisa Kato1, Hajime Okumura1(1. National Institute of Advanced Industrial Science and Technology (AIST)(Japan), 2. Showa Denko K. K.(Japan))