Schedule 5 11:15 AM - 11:30 AM [Tu-2B-02] Growth of 50 mm useable height 150 mm 4H-SiC, defect conversion and reduction by thermal treatment and their characterization *SRaghavan Parthasarathy1, Roman Drachev1, Bob Berliner1, Bala Bathey1, Henry Chou1 (1. GT Advanced Technologies Tech(United States of America))
