ICSCRM2019

講演情報

印刷

Oral Presentation

MOS Gate Stacks and Device Processing

[Tu-3A] Transition Layer & Fluctuations

2019年10月1日(火) 13:45 〜 15:45 Room A (Kyoto International Conference Center)

13:45 〜 14:15

[Tu-3A-01(Invited)] Interface State Density Distributions near The Conduction Band Edge Originating from The Conduction Band Fluctuation in SiO2/SiC Systems

*Koji Ito1, Takuma Kobayashi1, Tsunenobu Kimoto1 (1. Kyoto Univ.(Japan))