[We-2A] Inversion Layer Transport

[We-2A-04] Independent Elimination of Traps and Scattering Centers by NO Annealing in 4H-SiC (11-20) a-face MOS Characterized by Hall Effect Measurement

*Hirohisa Hirai¹, Tetsuo Hatakeyama¹, Mitsuru Sometani¹, Mitsuo Okamoto¹, Shinsuke Harada¹, Hajime Okumura¹ (1. AIST(Japan))