The 26th International Display Workshops (IDW '19)

講演情報

Oral Presentation

[AMD5] Oxide TFT: Device Fundamentals

2019年11月29日(金) 09:00 〜 10:30 Mid-sized Hall B (1F)

Chair: Kazumasa Nomoto (Sony)
Co-Chair: Hideya Kumomi (Tokyo Tech.)

09:00 〜 09:25

[AMD5-1(Invited)] Switching Characteristic Enhancement of P-type Cu2O TFTs

Dongwoo Kim1, I Sak Lee1, Sujin Jung1, Sung Min Rho1, *Hyun Jae Kim1 (1. Yonsei University (Korea))

キーワード:Oxide TFT, p-type semiconductor, Copper oxide

We propose three methods to enhance switching characteristics of p-type Cu2O thin film transistors (TFTs) by passivating the copper oxide TFTs with silicon dioxide (SiO2) using sputtering, oxidizing the back channel of copper oxide with hypochlorous acid (HClO), and doping gallium into the Cu2O film.