[AMDp1] Oxide TFTs

[AMDp1-15] Effect of Fluorine Doping on Illumination Stability of Solution-Processed IGZO TFTs

*Kyung-Mo Jung¹, Jongsu Oh¹, Kyoung-Rae kim¹, Eun Kyo Jung¹, Jungwoo Lee¹, Yong-Sang Kim¹ (1. Sungkyunkwan University (Korea))

キーワード：oxide semiconductor, thin-film transistors, fluorine, a-IGZO, passivation

This study investigated the effect of F doping though NBIS comparison between F-doped and conventional IGZO TFTs. The oxygen vacancies in the IGZO layer were reduced and the bandgap of the IGZO was widened by F doping. As a result of this, the illumination stability of F doped-TFTs was improved.