10:40 〜 11:00
[S8.2] 光インデンテーション法を用いたウルツ鉱型単結晶の転位挙動における光環境効果の評価
キーワード:可塑性、半導体、ナノインデンテーション
Photoindentation tests were conducted on two wurtzite semiconductor single crystals, ZnO and GaN, with different crystal orientations. The effects of light on dislocation behavior were revealed.