[M-IS17] 結晶成⻑、溶解における界⾯・ナノ現象

[MIS17-10] 機能性バルク結晶における原子スケール欠陥構造制御

★招待講演

*原田 俊太^1,2 (1.名古屋大学、2.JST さきがけ)

キーワード：結晶欠陥、転位、面欠陥、パワーデバイス、フォノン

Defects in crystalline materials often govern their physical properties. Therefore, control of defects in crystalline materials, especially in semiconductor materials, is very important. For example, the present electronics is largely depending on silicon as a semiconductor material because dislocation-free silicon crystal is possible to produce by necking technique established by Dash about 60 years ago¹. In the field of electronics, defects in semiconductor materials are often harmful for electric device and should be eliminated. However, from a different point of view, defects can be regarded as local nanostructure in a perfect crystal, which would express novel new function. For both purpose, it is necessary to understand the structural principle and control the defect structures. In this talk, I will introduce the defect control for functional bulk crystals including ordered arrangement of vacancies in thermoelectric silicide^2,3, reduction of dislocation in silicon carbide for power electronic^4,5 and ordered arrangement of planar faults in titanium oxide natural superlattice for control of thermal phonons toward advanced heat control⁶.

References
¹W. C. Dash, J. Appl. Phys. 30 (1959) 459.
²S. Harada et al., Appl. Phys. Express 5 (2012) 035203.
³S. Harada et al., Phil. Mag. 91 (2011) 3108.
⁴S. Harada et al., APL Mater. 1 (2013) 022109.
⁵S. Harada et al., Acta Mater. 91 (2014) 284.
⁶S. Harada et al., J. Appl. Phys. 108 (2011) 083703.