Oral presentation

16. Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[16p-A4-1~14] 16.3 Bulk, thin-film and other silicon-based solar cells

Mon. Sep 16, 2013 1:30 PM - 5:15 PM A4 (TC1 2F-216)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[16p-A4-1] Increase of the solubility of desert sands (quartz) for purification

^○(P)Kenta Tsubouchi¹, Toshiyuki Nishimura², Kenji Itaka³, Izumi Nakai⁴, Miku Itou⁴, Kenta Masuda⁵, Keiichi Miura⁵, Nobuo Toyokura¹, Hideomi Koinuma¹ (Univ. Tokyo¹, NIMS², Hirosaki Univ.³, Tokyo Science Univ.⁴, Taiheiyo cement⁵)

1:45 PM - 2:00 PM

[16p-A4-2] Direct reduction of high purity silica by microwave heating

^○(P)Kenta Tsubouchi¹, Shinnosuke Ishihara², Takashi Watanabe², Miyuki Hayashi², Kazuhiro Nagata³, Kenta Masuda⁴, Keiichi Miura⁴, Masayoshi Shimizu⁵, Nobuo Toyokura¹, Hideomi Koinuma¹ (Univ. Tokyo¹, Tokyo Inst. Tech.², Tokyo Univ. Arts³, Taiheiyo Cement⁴, SEAVAC⁵)

2:00 PM - 2:15 PM

[16p-A4-3] Wetting and infiltration of Si on Si₃N₄ releasing coating in the growth of cast silicon

^○Jianyong Li^{1, 2}, Karolin Jiptner², Ronit.R Prakash², Jun Chen², Takashi Sekiguchi², Hirofumi Harada², Yoshiji Miyamura², Yoshio Ohshita³, Koichi Kakimoto⁴ (Meiji Univ.¹, NIMS², Toyota Tech. Inst.³, Kyushu Univ.⁴)

2:15 PM - 2:30 PM

▲ [16p-A4-4] Influence of cooling flux on the generation of dislocations for cylindrical single crystal silicon by numerical modeling

^○Bing Gao¹, Satoshi Nakano¹, Hirofumi Harada², Yoshiji Miyamura², Takashi Sekiguchi², Koichi Kakimoto¹ (RIAM, Kyushu Univ.¹, NIMS²)

2:30 PM - 2:45 PM

[16p-A4-5] Relationship between dislocation density, residual stress and outgoing heat from the crystal in multicrystalline silicon for solar cells

^○Satoshi Nakano¹, Bing Gao¹, Hirofumi Harada², Yoshiji Miyamura², Takashi Sekiguchi², Koichi Kakimoto¹ (RIAM, Kyushu Univ.¹, NIMS²)

2:45 PM - 3:00 PM

▲ [16p-A4-6] Directional Growth of Multicrystalline Silicon from Microcrystal Feedstock

^○Ronit Prakash^1,2, Yoshiji Miyamura¹, Jun Chen¹, Karolin Jiptner¹, Jianyong Li^1,3, Hirofumi Harada¹, Takashi Sekiguchi^1,2 (NIMS¹, Tsukuba Univ.², Meiji Univ.³)

Break (3:00 PM - 3:15 PM)

3:15 PM - 3:30 PM

[16p-A4-7] Growth of 70kg mono-like Si ingot utilizing functional grain boundaries

^○Kentaro Kutsukake^{1, 3}, Noritaka Usami², Yutaka Ohno¹, Yuki Tokumoto¹, Ichiro Yonenaga¹ (Tohoku Univ.¹, Nagoya Univ.², PRESTO, JST³)

3:30 PM - 3:45 PM

[16p-A4-8] Dislocations in mono-like Si observed by PL imaging method

^○Shunya Ninomiya¹, Kentaro Kutsukake^1,2, Yutaka Ohno¹, Yuki Tokumoto¹, Noritaka Usami³, Ichiro Yonenaga¹ (Tohoku Univ.¹, JST PRESTO², Nagoya Univ.³)

3:45 PM - 4:00 PM

▲ [16p-A4-9] Control of microstructures and reduction of stress in multicrystalline Si ingot grown by floating cast method using designed double crucibles

^○(P)Supawan Joonwichien¹, Satoru Matsushima¹, Isao Takahashi¹, Noritaka Usami¹ (Nagoya Uni.¹)

4:00 PM - 4:15 PM

[16p-A4-10] Relationship between grain boundary characters and dislocation generation in a large-scale multicrystalline Silicon ingot grown by floating cast method

^○Isao Takahashi¹, Supawan Joonwichien¹, Satoru Matsushima¹, Noritaka Usami¹ (Nagoya Univ.¹)

4:15 PM - 4:30 PM

[16p-A4-11] Growth of Si bulk crystals using the noncontact crucible method

^○Ryota Murai¹, Kazuo Nakajima¹, Kohei Morishita¹ (Energy Sci.,Kyoto Univ.¹)

4:30 PM - 4:45 PM

[16p-A4-12] Growth of square-shaped Si single bulk crystals using the noncontact crucible method

^○Kazuo Nakajima¹, Ryota Murai¹, Hohei Morishita¹ (Kyoto Univ.¹)

4:45 PM - 5:00 PM

△ [16p-A4-13] Behavior of donor and acceptor impurities in highly doped and highly compensated Si

^○Koji Tanaka^{1, 2}, Michio Tajima^{1, 2}, Maxime Forster³, Hiroyuki Toyota¹, atsushi Ogura² (ISAS/JAXA¹, Meiji Univ.², APOLLON SOLAR³)

5:00 PM - 5:15 PM

△ [16p-A4-14] Far-Infrared Absorption Measurements of Multicrystalline Silicon for Solar Cells at Low Temperature

^○Kuniyuki Sato^1,2, Takumi Uno^1,2, Atsushi Ogura¹, Haruhiko Ono^1,2 (Meiji Univ.¹, Kanagawa Ind. Tech. Center²)