Atomically Flat Planarization of Ge (110) and (100) Surface by H2 Annealing

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Insulator technology

Tue. Sep 17, 2013 1:00 PM - 6:30 PM B5 (TC2 2F-201)

3:45 PM - 4:00 PM

^○Tomonori Nishimura^1,2, Takeaki Yajima^1,2, Kosuke Nagashio^1,2, Akira Toriumi^1,2 (The Univ. of Tokyo¹, JST-CREST²)

Keywords:germanium