The 74th JSAP Autumn Meeting,2013

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-P8-1~10] 14.1 Physical properties of exploratory materials

Thu. Sep 19, 2013 1:30 PM - 3:30 PM P8 (Davis Memorial Auditorium)

1:30 PM - 3:30 PM

[19p-P8-1] Effect of deposition rate on the fabrication of -FeSi2 thin film by means of ion beam sputter deposition method

satoshi hamamoto1, kenji yamaguchi2, kiichi hojou2 (Ibaraki Univ1, JAEA2)

Keywords:シリサイド半導体,環境半導体,表面処理