[27p-G21-1~18] 15.4 III-V-group nitride crystals

[27p-G21-7] △Reduction of threading dislocation of GaN on Si using AlGaN/AlN interlayer

^○Hisashi Yoshida¹, Toshiki Hikosaka¹, Naoharu Sugiyama¹, Shinya Nunoue¹ (Toshiba R&D Center¹)

Keywords:窒化物半導体，GaN，Si基板，転位密度