[28a-G20-1~10] Recent status for fabrication and characterization of semiconductor quantum dots

[28a-G20-9] MBE Growth of 1100 nm-Range InGaAs Quantum Dot Lasers

^○Takeo Kageyama^1,2, Kenichi Nishi^1,2, Yasunari Maeda¹, Keizo Takemasa^1,2, Mitsuru Sugawara^1,2, Yasuhiko Arakawa^2,3 (QD Laser, Inc.¹, NanoQuine, The University of Tokyo², IIS, The University of Tokyo³)

Keywords:量子ドット、1100nm、半導体レーザ