The 60th JSAP Spring Meeting,2013

Presentation information

Regular sessions(Oral presentation)

21. Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[28p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 28, 2013 2:00 PM - 6:30 PM G19 (B5 4F-2403)

[28p-G19-13] n-ZnO/p-ZeTe heterojunction characteristics formed by bias voltage PLD and direct bonding

Takuya Akao1, Kazuya Komatsu1, Yuki Seno1, Takao Komiyama1, Yasunori Tyounan1, Hiroyuki Yamaguchi1, Takashi Aoyama1 (Akita Prefectural Univ.1)

Keywords:酸化亜鉛、ZnTe、貼り合わせ