△Characterization of extended defects in n-type and p-type SiC using Photoluminescence imaging

Presentation information

Regular sessions(Oral presentation)

15. Crystal Engineering » 15.6 IV-group-based compounds

Thu. Mar 28, 2013 1:45 PM - 6:45 PM G22 (B5 4F-2406)

^○Chihiro Kawahara¹, Jun Suda², Tsunenobu Kimoto² (Kyoto Univ.¹, Kyoto Univ.²)

Keywords:SiC、拡張欠陥、PLイメージング