[29p-G19-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[29p-G19-10] A-InGaZnO4-TFTs on Flexible Substrate using Dielectric Anodic-Aliminum-Oxide

^○Masaya Nakayama¹, Fumihiko Mochiduki¹, Shigenori Yuuya¹, Ryouzou Kaito¹, Atsushi Tanaka¹, Masayuki Suzuki¹ (FUJIFILM Co.¹)

Keywords:フレキシブル基板、酸化物半導体