[30p-G21-1~7] 15.4 III-V-group nitride crystals

[30p-G21-2] Dependence of light output power of InGaN based light-emitting diodes on column-height of nano-sized patterned sapphire substrate

^○Takuya Egami¹, Seita Miyoshi¹, Ryo Inomoto¹, Narihito Okada¹, Kazuyuki Tadatomo¹, Tomoyasu Nishimiya², Mitihiro Hiramoto², Shinichi Motoyama² (Grad. School of Sci. & Eng., Yamaguchi Univ.¹, SAMCO inc.²)

Keywords:発光ダイオード、ナノインプリント