The 75th JSAP Autumn Meeting, 2014

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18a-A22-1~12] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 9:00 AM - 12:15 PM A22 (E314)

12:00 PM - 12:15 PM

[18a-A22-12] Reforming mechanism for ALD-Al2O3/GaN structure by high pressure water vapor annealing

○Koji Yoshitsugu1, Masahiro Horita1, Urakawa Satoshi1, Yasuaki Ishikawa1, Yukiharu Uraoka1 (NAIST1)

Keywords:高圧水蒸気処理,Al2O3/GaN,異種接合界面制御