Study of the high reflective Ag electrode on high carrier concentration Si-doped Al0.03Ga0.97N

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 1:30 PM - 7:15 PM C5 (Open Hall)

2:15 PM - 2:30 PM

^○Shunsuke Kawai¹, Daisuke Iida¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo Univ.¹, ARC.Inst²)

Keywords:high carrier concentration Si-doped Al0.03Ga0.97N