[18a-D2-1~9] 15.2 II-VI-group crystals

Tue. Mar 18, 2014 9:30 AM - 12:00 PM D2 (D113)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

△ [18a-D2-1] Analysis of domain structure in ZnTe thin film grown on a-plane sapphire

^○Sotaro Yamashita¹, Taizo Nakasu¹, Takayuki Aiba¹, Wei-che Sun¹, Kosuke Taguri¹, Shota Hattori¹, Hukino Kazami¹, Masakazu Kobayashi^1,2, Toshiaki Asahi³, Hiroyoshi Togo⁴ (Waseda Univ.Dep.of Elec.Eng.and Bio sci.¹, Lab.for Mat.Sci.& Tech.², JX³, NTT⁴)

9:45 AM - 10:00 AM

△ [18a-D2-2] Analysis of ZnTe films on c-plane sapphire substrates by wide area RSM

^○Takayuki Aiba¹, Taizo Nakasu¹, Sotaro Yamashita¹, Wei-Chi Sun¹, Kosuke Taguri¹, Shota Hattori¹, Fukino Kazami¹, Masakazu Kobayashi^1,2, Hiroyoshi Togo³, Toshiaki Asahi⁴ (Waseda Univ. Dep. of Elec. Eng. and Biosci.¹, Waseda Univ. Lab. for Mat. Sci.&Tech.², NTT³, JX⁴)

10:00 AM - 10:15 AM

△ [18a-D2-3] ZnTe film growth on n-plane sapphire substrates and analysis domain structure

^○Taizo Nakasu¹, Sotaro Yamashita¹, Takayuki Aiba¹, Wei-Che Sun¹, Kosuke Taguri¹, Shota Hattori¹, Fukino Kazami¹, Masakazu Kobayashi^1,2, Hiroyoshi Togo³, Toshiaki Asahi⁴ (Waseda Univ. Dep. of Elec. Eng. and Biosci.¹, Waseda Univ. Lab. for Mat. Sci.&Tech.², NTT³, JX⁴)

10:15 AM - 10:30 AM

[18a-D2-4] MBE growth of Al-doped ZnSe layers on ZnTe substrates for solar cells

^○Kosuke Mizoguchi¹, Yasuhiro Nagao¹, Tooru Tanaka^1,2, Katsuhiko Saito¹, Guo Qixin¹, Mitsuhiro Nishio¹ (Saga Univ.¹, JST PRESTO²)

Break 10:30〜10:45 (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[18a-D2-5] Development of Organic-Inorganic Hybrid structure ZnSSe Semiconductor Ultraviolet APD by Inkjet Method ～Suppression of Device Degradation by Surface Passivation Film and Study for Integration～

^○Ryoichi Inoue¹, Yusuke Inagaki¹, Noriyuki Ikadatsu¹, Takeru Fujimoto¹, Kenta Tanaka², Akio Tazue², Tomoki Abe¹, Hirofumi Kasada¹, Koshi Ando¹ (Tottori Univ.¹, Tottori Univ.²)

11:00 AM - 11:15 AM

[18a-D2-6] Investigation of low-resistance p-side electrodes for II-VI compound semiconductor optical devices on InP substrates

^○Shingo Takamatsu¹, Ichirou Nomura¹, Katsumi Kishino¹ (Sophia Univ.¹)

11:15 AM - 11:30 AM

[18a-D2-7] Low resistivity of hydrogen-ion implanted ZnO bulk single crystals: The evaluation by nuclear reaction analysis and electron spin resonance

^○（M1）Takuya Kaida¹, Kazuma Kamioka¹, Kazuo Kuriyama¹, Kazumasa Kushida², Atsushi Kinomura³ (Hosei Univ.¹, Osaka kyouiku Univ.², National institute of advanced science and technology³)

11:30 AM - 11:45 AM

[18a-D2-8] The growth of AgGaTe₂ layers on Mo and effect of the Ag₂Te buffer layer

^○Aya Uruno¹, Ayaka Usui¹, Yuji Takeda¹, Tomohiro Inoue¹, Masakazu Kobayashi^1,2 (Waseda Univ. Dept. of Elec. Eng. and Biosci.¹, Waseda Univ. Lab. for Mat. Sci. & Tech.²)

11:45 AM - 12:00 PM

[18a-D2-9] Growth of AgAlTe₂ by Closed Space Sublimation and Analysis of the Orientation

^○Aya Uruno¹, Ayaka Usui¹, Tomohiro Inoue¹, Yuji Takeda¹, Masakazu Kobayashi^1,2 (Waseda Univ. Dept. of Elec. Eng. and Biosci.¹, Waseda Univ. Lab. for Mat. Sci. & Tech.²)