[19p-E18-7~19] 17.4 Device application

Wed. Mar 19, 2014 2:45 PM - 6:15 PM E18 (E307)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:45 PM - 3:00 PM

[19p-E18-7] Improvement of Performance of Paper Transistor Using Carbon-Nanotube-Composite Paper and Its Application to Logic Circuit

^○（B）Yoshiki Hamana¹, Takahide Oya¹ (Yokohama National Univ.¹)

3:00 PM - 3:15 PM

[19p-E18-8] Development of carbon-nanotube-composite-thread and it’s application to “thread transistor”

^○（B）Masatoshi Yoshida¹, Takahide Oya¹ (Yokohama National Univ.¹)

3:15 PM - 3:30 PM

▲ [19p-E18-9] Advantages of Flattened Electrode in Bottom Contact Single Walled Carbon Nanotube Field Effect Transistor

^○Agung Setiadi¹, Megumi Akai¹, Akira Saito¹, Yuji Kuwahara¹ (Osaka Univ.¹)

Break 15:30〜15:45 (3:30 PM - 3:45 PM)

3:45 PM - 4:00 PM

△ [19p-E18-10] Estimation of the contact resistivity and Schottky barrier height at CNT/SiC interface by top contact electrode

^○Kazuma Suzuki¹, Masafumi Inaba¹, Megumi Shibuya¹, Chih-Yu Lee¹, Miho Myodo¹, Atsushi Hiraiwa¹, Yoshiho Masuda², Wataru Norimatsu², Michiko Kusunoki², Hiroshi Kawarada¹ (Waseda Univ.¹, Nagoya Univ.²)

4:00 PM - 4:15 PM

△ [19p-E18-11] Sub-femtogram thermogravimetric analysis using carbon nanotube resonator

^○Fumiya Deno¹, Seiya Hiroshima¹, Kuniharu Takei¹, Takayuki Arie¹, Seiji Akita¹ (Osaka Pref. Univ.¹)

4:15 PM - 4:30 PM

△ [19p-E18-12] Operation Speed Enhancement of Flexible Carbon Nanotube Integrated Circuits

^○Toshitada Sanzen¹, Antti Kaskela², Patrik Laiho², Albert Nasibulin², Shigeru Kishimoto¹, Esko Kauppinen², Yutaka Ohno¹ (Nagoya Univ.¹, Aalto Univ.²)

4:30 PM - 4:45 PM

△ [19p-E18-13] Macro-Scale Printed Strain Sensor with high sensitivity for Stress Monitoring of Infrastructures

^○Shingo Harada¹, Wataru Honda¹, Takayuki Arie¹, Seiji Akita¹, Kuniharu Takei¹ (Osaka Pref.Univ.¹)

4:45 PM - 5:00 PM

[19p-E18-14] Low-voltage carrier injection into semiconductor thin film from CNT thin film by field enhancement

^○Tatsuya Yamada¹, Shigeru Kishimoto¹, Yutaka Ohno¹ (Nagoya Univ.¹)

5:00 PM - 5:15 PM

[19p-E18-15] Characteristics of chemically-doped n-type carbon nanotube thin film transistor: Effect of atmosphere and improvement of stability

^○Tomohiro Yasunishi¹, Shigeru Kishimoto¹, Yutaka Ohno¹ (Nagoya Univ.¹)

5:15 PM - 5:30 PM

[19p-E18-16] High mobility thin film transistors using high quality semiconducting SWCNTs

^○Shunjiro Fujii^1,2, Satoshi Asano², Takeshi Tanaka^1,2, Hiromichi Kataura^1,2 (NRI, AIST¹, TASC²)

5:30 PM - 5:45 PM

[19p-E18-17] Fabrication of piezoelectric device using semiconducting single-walled carbon nanotube thin film on PVDF sheet

^○Takeshi Ikawa¹, Tomoaki Taira¹, Eika Sun¹, Hiroshi Tabata¹, Osamu Kubo¹, Mitsuhiro Katayama¹ (Grad. Sch. Eng., Osaka Univ.¹)

5:45 PM - 6:00 PM

[19p-E18-18] Development of Carbon nanotube thermal interface material

^○Akio Kawabata¹, Tomo Murakami¹, Aoi Arii¹, Mizuhisa Nihei¹, Naoki Yokoyama¹ (AIST GNC¹)

6:00 PM - 6:15 PM

[19p-E18-19] High-throughput fabrication of carbon nanotube thin-film transistors by flexographic printing : Fabrication of short channel top-gate devices

^○Michihiko Maeda¹, Kentaro Higuchi¹, Shigeru Kishimoto¹, Yuta Nakajima², Takuya Tomura², Masafumi Takesue², Katsuhiko Hata², Yutaka Ohno¹ (Nagoya Univ.¹, Bando Chemical Industries, Ltd.²)